PART |
Description |
Maker |
BAL99LT1 ON0111 |
JT 22C 22#22D PIN WALL RECP SILICON, SIGNAL DIODE, TO-236AB CASE 318-08/ STYLE 18 SOT-23 (TO-236AB) CASE 318-08, STYLE 18 SOT-23 (TO-236AB) From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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BC847ALT1 BC847BLT1 BC847CLT1 BC848BLT1 BC850CLT1 |
CASE 318-08 STYLE 6 SOT-23 (TO-236AB) CASE 318-08, STYLE 6 SOT-23 (TO-236AB) CASE 318-08/ STYLE 6 SOT-23 (TO-236AB) CIR 4C 4#0 FR PIN PLUG High Speed CMOS Logic Triple 3-Input NOR Gates 14-PDIP -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB NPN Silicon General Purpose Transistors NPN硅通用晶体 High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola Inc Motorola, Inc. Motorola Mobility Holdings, Inc.
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BSS123LT1 BSS123LT1_D ON0223 |
TMOS FET Transistor(N-Channel) CASE 318-08, STYLE 21 SOT-23 (TO?36AB) From old datasheet system
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Motorola Inc Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
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MBD110DWT1_D ON0400 |
CASE 419B-1, STYLE 6 SOT-363 From old datasheet system
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ON Semi
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BAV99WT1 BAV99RWT1 ON0136 BAV99 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type SC-70/SOT-323 Dual Series Switching Diode BAV99WT1 CASE 419-2, STYLE 9 SC-0/SOT-23 From old datasheet system
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ROHM ON Semi MOTOROLA[Motorola, Inc]
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PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
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MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
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BC846AWT1 BC847AWT1 ON0161 BC848BWT1 BC848AWT1 BC8 |
General Purpose Transistors(NPN Silicon) 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR CASE 419-2, STYLE 3 SOT-23/SC-0 From old datasheet system
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ONSEMI[ON Semiconductor]
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BAS16LT1 ON0114 |
CASE 31808, STYLE 8 SOT23 (TO236AB) SILICON, SIGNAL DIODE, TO-236AB CASE 31808/ STYLE 8 SOT23 (TO236AB) From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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ST95040 ST95040B1TR ST95040B3TR ST95040B6TR ST9504 |
4K serial SPI EEPROM with positive clock strobe 4/2/1 KBITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE (ST950x0) 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe MOSFET, N SOT-23MOSFET, N SOT-23; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SOT-23; Current, Id cont:2.6A; Current, Idm pulse:10A; Power, Pd:0.75W; Resistance, Rds on:0.07R; SMD:1; Current, Id 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe 4K/2K/1K串行SPI EEPROM,带有正时钟选 SPI Serial EEPROM SPI串行EEPROM 2K serial SPI EEPROM with positive clock strobe
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ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
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BOURNS INC
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6146 |
Case, Briefcase, Style, Large
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Pomona Electronics
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P80C557E4EFB-T P80C557E4EBB-T |
8-BIT, FLASH, 16 MHz, MICROCONTROLLER, PQFP80 14 X 20 MM, 2.70 MM HEIGHT, PLASTIC, SOT-318-1, QFP-80 Single-chip 8-bit microcontroller(单片8位微控制 单芯位微控制器(单片8位微控制器)
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NXP Semiconductors N.V.
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